English
简体中文
CAP CER 5600PF 100V C0G/NP0 1206
IC DRAM 2GBIT PARALLEL 96TWBGA
MODULE XFRMR
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR3 |
| 内存大小: | 2Gb (128M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 933 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 20 ns |
| 电压 - 电源: | 1.425V ~ 1.575V |
| 工作温度: | -40°C ~ 95°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 96-TFBGA |
| 供应商设备包: | 96-TWBGA (9x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
71V67602S166BGGRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
70V3589S133DRGIRenesas Electronics America |
IC SRAM 2MBIT PARALLEL 208PQFP |
|
71V3556SA100BGGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
N64S818HAS21ISanyo Semiconductor/ON Semiconductor |
IC SRAM 64KBIT SPI 16MHZ 8SOIC |
|
W9751G6NB-25 TRWinbond Electronics Corporation |
IC DRAM 512MBIT PARALLEL 84VFBGA |
|
QS70681-25TFRochester Electronics |
IC SRAM 288KBIT 40MHZ |
|
MT57W2MH8CF-4Rochester Electronics |
DDR SRAM, 2MX8, 0.45NS PBGA165 |
|
W9816G6JH-5 TRWinbond Electronics Corporation |
IC DRAM 16MBIT PAR 50TSOP II |
|
M5M5256DVP-70LL#SERochester Electronics |
STANDARD SRAM, 32KX8 |
|
71V67602S150BGGRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
CY14E101Q2A-SXITCypress Semiconductor |
IC NVSRAM 1MBIT SPI 40MHZ 8SOIC |
|
IS61NVP51236B-200B3LI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
93LC46X/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |