类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 4Kb (256 x 8 x 2) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 900 ns |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MX25L3233FM2I-08GMacronix |
IC FLASH 32MBIT SPI/QUAD 8SOP |
|
R1Q2A7209ABG-40IB0Rochester Electronics |
STANDARD SRAM, 8MX9, 0.45NS |
|
CY62126EV30LL-45ZSXARochester Electronics |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
W25Q20CLSNIGWinbond Electronics Corporation |
IC FLASH 2MBIT SPI 104MHZ 8SOIC |
|
CY14B101LA-SP25XICypress Semiconductor |
IC NVSRAM 1MBIT PARALLEL 48SSOP |
|
TMS55161-70ADGHRochester Electronics |
VIDEO DRAM, 256KX16, 70NS PDSO64 |
|
AS7C3256A-12JCNAlliance Memory, Inc. |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
043641WKAB-3Rochester Electronics |
256KX18 SRAM |
|
AT28C256-25DM/883-815Roving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28CDIP |
|
MT58L128L32F1T-8.5Rochester Electronics |
IC SRAM 4MBIT PARALLEL 100TQFP |
|
24CW640T-I/CS1668Roving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 1MHZ 4CSP |
|
25AA160T/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 1MHZ 8SOIC |
|
LE2464CXATBGSanyo Semiconductor/ON Semiconductor |
IC EEPROM 64KBIT I2C 6WLCSP |