类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPDDR |
内存大小: | 1Gb (64M x 16) |
内存接口: | Parallel |
时钟频率: | 200 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 5 ns |
电压 - 电源: | 1.7V ~ 1.95V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 60-TFBGA |
供应商设备包: | 60-TWBGA (8x10) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S29GL064S70TFI020Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 56TSOP |
|
W25Q128JVBIQ TRWinbond Electronics Corporation |
IC FLSH 128MBIT SPI/QUAD 24TFBGA |
|
AS7C1024C-12JINTRAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
IS45S16800F-7BLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 54TFBGA |
|
71V124SA10TYG8Rochester Electronics |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
S25FL256SDPBHVC13Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |
|
CY7C109V33-15VCRochester Electronics |
STANDARD SRAM, 128KX8 |
|
71V2546S150BGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
BR24T02FJ-WGE2ROHM Semiconductor |
IC EEPROM 2KBIT I2C 400KHZ 8SOPJ |
|
25AA160A-I/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 10MHZ 8SOIC |
|
M24C64-DRDW3TP/KSTMicroelectronics |
IC EEPROM 64KBIT I2C 1MHZ 8TSSOP |
|
M95320-RMN6TPSTMicroelectronics |
IC EEPROM 32KBIT SPI 20MHZ 8SO |
|
11LC160-I/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SGL WIRE 8SOIC |