类型 | 描述 |
---|---|
系列: | MX29GL |
包裹: | Tray |
零件状态: | Not For New Designs |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 512Mb (64M x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 110ns |
访问时间: | 110 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 56-TFSOP (0.724", 18.40mm Width) |
供应商设备包: | 56-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
93LC46C-I/STRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 3MHZ 8TSSOP |
|
S29GL512T10GHI020YRochester Electronics |
IC FLASH 512MBIT PARALLEL 56FBGA |
|
MX29GL256EHT2I-90QMacronix |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
93AA76CT-I/MNYRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ 8TDFN |
|
MX30UF4G28AB-XKIMacronix |
IC FLASH 4GBIT PARALLEL 63VFBGA |
|
IS45S16320D-7BLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 54TFBGA |
|
S29GL512T12DHN020Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
R1LP0408DSB-5SI#S0Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 32TSOP II |
|
71V65603S150BQGRochester Electronics |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
FT93C46A-UTR-TFremont Micro Devices |
IC EEPROM 1KBIT SPI 2MHZ 8TSSOP |
|
BR25S320FJ-WE2ROHM Semiconductor |
IC EEPROM 32KBIT SPI 20MHZ 8SOPJ |
|
IS42S32160F-6BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90TFBGA |
|
CY7C1021CV33-15ZCTRochester Electronics |
SRAM CHIP ASYNC SINGLE 3.3V 1M B |