类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Synchronous |
内存大小: | 1.152Mb (128K x 9) |
内存接口: | Parallel |
时钟频率: | 67 MHz |
写周期时间 - 字,页: | - |
访问时间: | 9 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
11AA010-I/PRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SINGLE WIRE 8DIP |
|
S25FL128LAGMFI013Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 8SOIC |
|
CY7C1613KV18-300BZIRochester Electronics |
QDR SRAM, 8MX18, 0.45NS PBGA165 |
|
71V2546S133BGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
IS45S16320F-7TLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 54TSOP II |
|
RM24C256DS-LMAI-TAdesto Technologies |
IC CBRAM 256KBIT I2C 1MHZ 8UDFN |
|
MD2147H3Rochester Electronics |
STANDARD SRAM, 4KX1, 55NS, MOS, |
|
S25FL128SAGBHI300Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
S26KL512SDABHV023Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 24FBGA |
|
MX25L6435EMI-10GMacronix |
IC FLASH 64MBIT SPI 104MHZ 16SOP |
|
NM24C04UFVM8Rochester Electronics |
IC EEPROM 4KBIT I2C 400KHZ 8SO |
|
W25Q64JWZPIQ TRWinbond Electronics Corporation |
IC FLASH 64MBIT SPI/QUAD 8WSON |
|
IS62WV102416DBLL-55TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 16MBIT PARALLEL 48TSOP I |