类型 | 描述 |
---|---|
系列: | 25CS |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 4Mb (512K x 8) |
内存接口: | SPI |
时钟频率: | 8 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BR24G02F-3GTE2ROHM Semiconductor |
IC EEPROM 2KBIT I2C 400KHZ 8SOP |
|
BRCD016GWZ-3E2ROHM Semiconductor |
IC EEPROM 16K I2C UCSP35L1 |
|
M24512-DFMC6TGSTMicroelectronics |
IC EEPROM 512KBIT I2C 8UFDFPN |
|
25LC020AT-E/MNYRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 10MHZ 8TDFN |
|
71256SA20PZIRochester Electronics |
SRAM 256K (32K X 8-BIT) |
|
CY14B101LA-ZS45XIRochester Electronics |
NON-VOLATILE SRAM, 128KX8, 45NS |
|
MT41K256M16TW-107 XIT:P TRMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
AS7C31026B-15JCNTRAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
70V7339S133BF8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 208CABGA |
|
71V256SA10PZGRochester Electronics |
IC SRAM 256KBIT PARALLEL 28TSOP |
|
MT29F1G08ABBEAH4-AITX:E TRMicron Technology |
IC FLASH 1GBIT PARALLEL 63VFBGA |
|
IS61NVF51236B-6.5B3LI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
CY62167G18-55BVXICypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48VFBGA |