English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR2 |
| 内存大小: | 2Gb (256M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | 533 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 350 ps |
| 电压 - 电源: | 1.7V ~ 1.9V |
| 工作温度: | 0°C ~ 85°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 84-TFBGA |
| 供应商设备包: | 84-WBGA (8x12.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
70V658S10BFRenesas Electronics America |
IC SRAM 2MBIT PARALLEL 208CABGA |
|
IS45S16160J-7CTLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
AT25SF161B-SHB-TAdesto Technologies |
IC FLASH 16MBIT SPI/QUAD 8SOIC |
|
S29AS008J70BFI020Cypress Semiconductor |
IC FLASH 8MBIT PARALLEL 48FBGA |
|
IS43TR16128B-15HBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
AS4C32M16MSA-6BINAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 54FBGA |
|
CAT34C02YI-GT5Rochester Electronics |
IC EEPROM 2KBIT I2C 8TSSOP |
|
CY7C1414AV18-200BZXCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
S29GL128N11FFBR23Rochester Electronics |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
CY62168GE30-45BVXITCypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48VFBGA |
|
S25FL116K0XNFIQ13Flip Electronics |
IC FLASH 16MBIT SPI/QUAD 8WSON |
|
AS7C34096A-10TCNAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 44TSOP2 |
|
CY14ME064J2A-SXIRochester Electronics |
IC NVSRAM 64KBIT I2C 8SOIC |
