类型 | 描述 |
---|---|
系列: | SST39 MPF™ |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH |
内存大小: | 4Mb (256K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 20µs |
访问时间: | 70 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-TFBGA |
供应商设备包: | 48-TFBGA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NDT18PFH-9METInsignis Technology Corporation |
IC DRAM 1GBIT PARALLEL 78FBGA |
|
93LC66AX-E/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8SOIC |
|
MT54V512H18EF-6Rochester Electronics |
QDR SRAM, 512KX18, 2.5NS PBGA165 |
|
CAT24C256YIGT3JNSanyo Semiconductor/ON Semiconductor |
IC EEPROM 256KBIT I2C 8TSSOP |
|
11LC161-I/PRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SGL WIRE 8DIP |
|
W25Q128JVEIM TRWinbond Electronics Corporation |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
CY2545C010Rochester Electronics |
MISC PRODUCTS |
|
70V7339S133BCI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 256CABGA |
|
AS4C64M16D1A-6TCNAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 66TSOP II |
|
23K640-I/SNRoving Networks / Microchip Technology |
IC SRAM 64KBIT SPI 20MHZ 8SOIC |
|
S27KS0641DPBHI023Cypress Semiconductor |
IC PSRAM 64MBIT PARALLEL 24FBGA |
|
S29JL064J70TFI000Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 48TSOP |
|
CY62256NLL-70SNITRochester Electronics |
STANDARD SRAM, 32KX8, 70NS |