类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 9Mb (256K x 36) |
内存接口: | Parallel |
时钟频率: | 87 MHz |
写周期时间 - 字,页: | - |
访问时间: | 8.5 ns |
电压 - 电源: | 3.135V ~ 3.465V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-TBGA |
供应商设备包: | 165-CABGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS61DDPB251236A-400M3LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165LFBGA |
|
24LC04BT-E/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 400KHZ 8SOIC |
|
MX25U2033EZBI-12GMacronix |
IC FLSH 2MBIT SPI/QUAD I/O 8USON |
|
93C46X/SNRochester Electronics |
1K BIT MICROWIRE SERIAL EEPROM |
|
24AA32AT-I/SMRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 8SOIJ |
|
CY7C2564XV18-366BZXCCypress Semiconductor |
NO WARRANTY |
|
GS4288C36GL-18IGSI Technology |
IC DRAM 288MBIT PARALLEL 144UBGA |
|
CAT24WC66WI-GRochester Electronics |
IC EEPROM 64KBIT I2C 8SOIC |
|
AT21CS11-MSH10-TRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 125KHZ 2XSFN |
|
AS7C4096A-15JINTRAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
UPD44165184BF5-E40-EQ3-ARochester Electronics |
QDR SRAM, 1MX18, 0.45NS |
|
W9812G6KH-5 TRWinbond Electronics Corporation |
IC DRAM 128MBIT PAR 54TSOP II |
|
MX25L25645GZ2I-10GMacronix |
IC FLSH 256MBIT SPI 120MHZ 8WSON |