English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Asynchronous |
| 内存大小: | 32Kb (2K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 20ns |
| 访问时间: | 20 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 68-LCC (J-Lead) |
| 供应商设备包: | 68-PLCC (24.21x24.21) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
93LC56CT-E/STRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 3MHZ 8TSSOP |
|
CY7C1512V18-167BZXIRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
BR24S64FVJ-WE2ROHM Semiconductor |
IC EEPROM 64KBIT I2C 8TSSOP |
|
S29GL512T11DHIV13Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
IS45S16160G-7CTLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
IS43R16160D-6BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 60TFBGA |
|
GD25Q32CTIGGigaDevice |
IC FLASH 32MBIT SPI/QUAD 8SOP |
|
CY62157DV30L-55ZSXIRochester Electronics |
STANDARD SRAM, 512KX16, 55NS |
|
AT24CS04-SSHM-TRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8SOIC |
|
MB85RS128TYPNF-G-BCERE1Fujitsu Electronics America, Inc. |
IC FRAM 128KBIT SPI 33MHZ 8SOP |
|
SST39VF401C-70-4I-MAQERoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 48WFBGA |
|
S34ML08G101TFA000Flip Electronics |
IC FLASH 8GBIT PARALLEL 48TSOP I |
|
SST26VF032BAT-104I/SMRoving Networks / Microchip Technology |
IC FLASH 32MBIT SPI/QUAD 8SOIJ |
