| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 1Kb (128 x 8) |
| 内存接口: | I²C |
| 时钟频率: | 400 kHz |
| 写周期时间 - 字,页: | 5ms |
| 访问时间: | 900 ns |
| 电压 - 电源: | 1.7V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
| 供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
CAV25320VE-GT3Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 32KBIT SPI 10MHZ 8SOIC |
|
|
MT29F2G16ABAGAWP-AIT:GMicron Technology |
IC FLASH 2GBIT PARALLEL 48TSOP I |
|
|
AT24C02C-MAHM-ERoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ 8UDFN |
|
|
S25FL256SDPNFV000Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 8WSON |
|
|
SST39SF010A-70-4I-NHE-TRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
|
CYD09S72V18-200BBXIRochester Electronics |
IC SRAM 9MBIT PARALLEL 256FBGA |
|
|
IS61QDPB41M36A-400M3LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165LFBGA |
|
|
CAT25080HU2I-GT3Rochester Electronics |
IC EEPROM 8KBIT SPI 10MHZ 8UDFN |
|
|
CY7C1318BV18-250BZCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
|
M24C01-RMN6PSTMicroelectronics |
IC EEPROM 1KBIT I2C 400KHZ 8SO |
|
|
CY7C1512KV18-300BZXIRochester Electronics |
QDR SRAM, 4MX18, 0.45NS PBGA165 |
|
|
93LC46AT-E/MSRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8MSOP |
|
|
S29GL128P90FFCR10ARochester Electronics |
IC FLASH 128MBIT PARALLEL 64FBGA |