IC DRAM 4GBIT PARALLEL 96FBGA
GRAY/SILVER RIBBON ON 1"
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR4 |
内存大小: | 4Gb (256M x 16) |
内存接口: | Parallel |
时钟频率: | 1.2 GHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 18 ns |
电压 - 电源: | 1.14V ~ 1.26V |
工作温度: | 0°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 96-TFBGA |
供应商设备包: | 96-FBGA (7.5x13.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S29GL01GT12DHVV10Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
24AA02UID-I/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
RM24C256C-LSNI-BAdesto Technologies |
IC CBRAM 256KBIT I2C 1MHZ 8SOIC |
|
71V3556SA100BGGIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
S25FL256LAGBHI023Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |
|
CY7C1328S-133AXIRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
CY7C1318JV18-300BZCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
LE24C082M-TLM-ERochester Electronics |
IC EEPROM 8KBIT I2C 400KHZ 8MFP |
|
MT58L64L18DT-10TRRochester Electronics |
SRAM SYNC DUAL 1M-BIT 64KX18 |
|
S25FL064LABNFM010Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 8WSON |
|
25LC320-E/SNRoving Networks / Microchip Technology |
IC EEPROM 32KBIT SPI 2MHZ 8SOIC |
|
71V424S12YGRochester Electronics |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
71256SA25YGRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |