类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 1Mb (128K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 20ns |
访问时间: | 20 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 32-BSOJ (0.400", 10.16mm Width) |
供应商设备包: | 32-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
24AA32AT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 8SOIC |
|
S25FL512SAGBHV313Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 24BGA |
|
GD25WD20CEIGRGigaDevice |
IC FLSH 2MBIT SPI/QUAD I/O 8USON |
|
AT28HC256-90JURoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 32PLCC |
|
71V3577S80BQIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
24C00-I/PRoving Networks / Microchip Technology |
IC EEPROM 128B I2C 400KHZ 8DIP |
|
71V25761S183PFGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
IS61LPS25636A-200TQ2LI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
CY14V101NA-BA25XITCypress Semiconductor |
IC NVSRAM 1MBIT PARALLEL 48FBGA |
|
PH28F320W30TD70Rochester Electronics |
FLASH, 2MX16, 70NS, PBGA56 |
|
LD2114AL4Rochester Electronics |
STANDARD SRAM, 1KX4 |
|
CY62177EV18LL-70BAXITCypress Semiconductor |
IC SRAM 32MBIT PARALLEL 48FBGA |
|
CY7C1168KV18-550BZXCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |