English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Asynchronous |
| 内存大小: | 576Kb (32K x 18) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 20ns |
| 访问时间: | 20 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
34AA02T-I/STRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 8TSSOP |
|
STK14C88-5K35MFlip Electronics |
IC NVSRAM 256KBIT PAR 32CDIP |
|
CD22101FXRochester Electronics |
4 X4 XPOINT SWITCH WITH MEMORY |
|
W632GG6NB12IWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96VFBGA |
|
PEB2447HV1.2Rochester Electronics |
MTSS (MEMORY TIME SWITCH LARGE) |
|
CY7C168A-20VCRochester Electronics |
STANDARD SRAM, 4KX4, 20NS |
|
BR25L040FVT-WE2ROHM Semiconductor |
IC EEPROM 4KBIT SPI 5MHZ 8TSSOPB |
|
AS7C316096A-10TINAlliance Memory, Inc. |
IC SRAM 16MBIT PARALLEL 48TSOP I |
|
W989D2DBJX6I TRWinbond Electronics Corporation |
IC DRAM 512MBIT PARALLEL 90VFBGA |
|
M24128-BFMN6TPSTMicroelectronics |
IC EEPROM 128KBIT I2C 1MHZ 8SOIC |
|
CY7C1460AV25-167BZCTRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
AS4C128M16D3LA-12BCNAlliance Memory, Inc. |
IC DRAM 2GBIT PARALLEL 96FBGA |
|
CY7C1021V33L-12ZCRochester Electronics |
STANDARD SRAM, 64KX16 |
