English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Mavriq™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | CBRAM® |
| 技术: | CBRAM |
| 内存大小: | 256kb (64B Page Size) |
| 内存接口: | SPI |
| 时钟频率: | 20 MHz |
| 写周期时间 - 字，页: | 100µs, 2.5ms |
| 访问时间: | - |
| 电压 - 电源: | 1.65V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
| 供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AS5F14G04SND-10LINAlliance Memory, Inc. |
IC FLASH 4GBIT SPI/QUAD I/O 8LGA |
|
IS43TR81280CL-125JBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 78TWBGA |
|
GVT71256D36T-5Rochester Electronics |
CACHE SRAM, 256KX36, 3.5NS |
|
25AA010AT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 10MHZ 8SOIC |
|
S29GL256N11TFVR10Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
IS61NLP25636A-200TQLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
IS46R86400D-6TLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 66TSOP II |
|
MT58L32L32DT-6Rochester Electronics |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
BR25H128FJ-2ACE2ROHM Semiconductor |
IC EEPROM 128KBIT SPI 8SOPJ |
|
71V67703S85BQGI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
MT46H64M32LFBQ-48 WT:CMicron Technology |
IC DRAM 2GBIT PARALLEL 90VFBGA |
|
71V65903S80BG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
S25FL512SDPBHV310Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 24BGA |
