类型 | 描述 |
---|---|
系列: | MoBL® |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 256Kb (32K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 70ns |
访问时间: | 70 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 28-SOIC (0.295", 7.50mm Width) |
供应商设备包: | 28-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
71V3577S85PFGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
GS8320Z36AGT-250IGSI Technology |
IC SRAM 36MBIT PARALLEL 100TQFP |
|
S29GL512T11TFB023Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
S25FS256SAGMFB000Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
W25Q10EWSNIGWinbond Electronics Corporation |
IC FLASH 1MBIT SPI/QUAD 8SOIC |
|
S29GL01GS10DHI010Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
GS864036GT-167IVGSI Technology |
IC SRAM 72MBIT PARALLEL 100TQFP |
|
71016S15YGI8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
DS28EC20Q+TMaxim Integrated |
IC EEPROM 20KBIT 1-WIRE 6TDFN |
|
S25FL064LABNFV043Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 8USON |
|
S25FL128SAGMFIR11Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
IS43TR82560DL-125KBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 78TWBGA |
|
BR24T02FV-WGE2ROHM Semiconductor |
IC EEPROM 2KBIT I2C 8SSOPB |