







IC EEPROM 256KBIT PAR 28CDIP
IC FET RF LDMOS 240W H-37260-2
CRYSTAL 12.0000MHZ 18PF SMD
SENSOR 200PSI M12-1.0 6G 4-20MA
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 256Kb (32K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字,页: | 10ms |
| 访问时间: | 200 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -55°C ~ 125°C (TC) |
| 安装类型: | Through Hole |
| 包/箱: | 28-CDIP (0.600", 15.24mm) |
| 供应商设备包: | 28-CDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
IS46LR32160B-6BLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90TFBGA |
|
|
W25M512JVEIQ TRWinbond Electronics Corporation |
IC FLSH 512MBIT SPI 104MHZ 8WSON |
|
|
AS4C8M32SA-7BCNAlliance Memory, Inc. |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
|
24LC32AFT-E/OTRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C SOT23-5 |
|
|
CAT93C66XIRochester Electronics |
IC EEPROM 4KBIT SPI 2MHZ 8SOIC |
|
|
71V65602S150PFRochester Electronics |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
|
SST26VF020A-104I/MFRoving Networks / Microchip Technology |
IC FLASH 2MBIT SPI/QUAD 8WDFN |
|
|
CY62167GN30-45ZXICypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48TSOP I |
|
|
S29GL512S10FHSS13Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64BGA |
|
|
CY7C1265XV18-600BZXCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
|
M5M5V108DKV-70H#BTRochester Electronics |
SRAM 1M-BIT (128K X 8) |
|
|
25LC160DT-I/STRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 8TSSOP |
|
|
CY7C09389V-12AXCRochester Electronics |
IC SRAM 1.152MBIT PAR 100TQFP |