English
简体中文
MEMS OSC XO 74.175824MHZ H/LV-CM
DIODE GEN PURP 150V 1A DO220AA
IC REG LINEAR 4.3V 50MA SC82AB
IC 128GBIT 153BGA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | - |
| 内存格式: | - |
| 技术: | FLASH - NAND (MLC) |
| 内存大小: | 128Gb (16G x 8) |
| 内存接口: | - |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | - |
| 工作温度: | -40°C ~ 85°C |
| 安装类型: | - |
| 包/箱: | 153-FBGA |
| 供应商设备包: | 153-BGA (11.5x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S29PL127J60TFA080Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
11AA020T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SGL WIRE 8SOIC |
|
CY7C1049B-20VITRochester Electronics |
STANDARD SRAM, 512KX8, 20NS |
|
W632GU6NB09IWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96VFBGA |
|
71V65703S80BQRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
MT58L512L18FT-8.5Rochester Electronics |
CACHE SRAM, 512KX18, 8.5NS PQFP1 |
|
71V416L10PHGIRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
DS1345YP-100+Maxim Integrated |
IC NVSRAM 1MBIT PAR 34PWRCAP |
|
TMS2114-45NLRochester Electronics |
STANDARD SRAM, 1KX4 |
|
93LC46A-I/STRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8TSSOP |
|
SST39VF200A-70-4C-MAQE-TRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 48WFBGA |
|
70V3389S4BCRenesas Electronics America |
IC SRAM 1.125MBIT PAR 256CABGA |
|
CD22101FRochester Electronics |
4 X4 XPOINT SWITCH WITH MEMORY |