







CRYSTAL 25.0000MHZ 8PF SMD
TRANS NPN 150V 0.5A SOT1215
MOSFET P-CH 80V 28A PPAK SO-8
IC DRAM 512MBIT PAR 54TSOP II
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Not For New Designs |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM |
| 内存大小: | 512Mb (32M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 143 MHz |
| 写周期时间 - 字,页: | - |
| 访问时间: | 5.4 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 54-TSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 54-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
MT25QU01GBBB8E12-0AUTMicron Technology |
IC FLSH 1GBIT SPI 133MHZ 24TPBGA |
|
|
CY62157DV18L-70BVIRochester Electronics |
STANDARD SRAM, 512KX16, 70NS |
|
|
S29GL128P10TFI023Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
|
IS43LD32640B-18BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 134TFBGA |
|
|
71V3556SA133BGGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
|
CY7C1041G-10VXICypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
|
DS28EC20P+TMaxim Integrated |
IC EEPROM 20KBIT 1-WIRE 6TSOC |
|
|
25LC256-M/MFRoving Networks / Microchip Technology |
IC EEPROM 256KBIT SPI 10MHZ 8DFN |
|
|
TC58NVG0S3HBAI6Toshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 1GBIT PARALLEL 67VFBGA |
|
|
CY7C1061GE18-15BVXICypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48VFBGA |
|
|
DS1265AB-100Rochester Electronics |
IC NVSRAM 8MBIT PARALLEL 36EDIP |
|
|
11LC040-I/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SGL WIRE 8SOIC |
|
|
24LC02BT-E/MSRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8MSOP |