English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q100 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 1Gb (128M x 8) |
| 内存接口: | SPI |
| 时钟频率: | 133 MHz |
| 写周期时间 - 字，页: | 8ms, 2.8ms |
| 访问时间: | - |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 125°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 24-TBGA |
| 供应商设备包: | 24-T-PBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY7C1425KV18-250BZXIRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
70V3589S133BCI8Renesas Electronics America |
IC SRAM 2MBIT PARALLEL 256CABGA |
|
MT25QU128ABA8E12-0AAT TRMicron Technology |
IC FLASH 128MBIT SPI 24TPBGA |
|
CY7C1061GE-10ZXITCypress Semiconductor |
IC SRAM 16MBIT PAR 54TSOP II |
|
CY62256VNLL-70SNCRochester Electronics |
STANDARD SRAM, 32KX8, 70NS |
|
W25Q40EWSNIGWinbond Electronics Corporation |
IC FLASH 4MBIT SPI 104MHZ 8SOIC |
|
CY7C1363C-133AJXCRochester Electronics |
CACHE SRAM, 512KX18, 6.5NS PQFP1 |
|
IS43R83200D-6TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 66TSOP II |
|
M24C08-FMN6TPSTMicroelectronics |
IC EEPROM 8KBIT I2C 400KHZ 8SO |
|
AS7C34098A-12TCNAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 44TSOP2 |
|
S25HS512TFANHI010Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 8WSON |
|
CY7C1041BL-15ZCRochester Electronics |
STANDARD SRAM, 256KX16, 15NS |
|
24AA256-E/SMRoving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 8SOIJ |
