类型 | 描述 |
---|---|
系列: | NoBL™ |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 18Mb (512K x 36) |
内存接口: | Parallel |
时钟频率: | 117 MHz |
写周期时间 - 字,页: | - |
访问时间: | 7.5 ns |
电压 - 电源: | 3.135V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 119-BGA |
供应商设备包: | 119-PBGA (14x22) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S29GL01GS12TFIV20Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 56TSOP |
|
93LC46AT/STRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8TSSOP |
|
CY27H010-45WMBRochester Electronics |
UVPROM, 128KX8, 45NS CDIP32 |
|
CY62137CV25LL-55BVIRochester Electronics |
STANDARD SRAM, 128KX16 |
|
IS61NLP102436B-200B3LI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165TFBGA |
|
CY7C1021CV33-15VXCRochester Electronics |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
24LC128-I/STRoving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 8TSSOP |
|
25LC128T-I/SMRoving Networks / Microchip Technology |
IC EEPROM 128KBIT SPI 8SOIJ |
|
S29GL512S11GHIV20Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 56FBGA |
|
93LC46CT-E/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 3MHZ 8SOIC |
|
AT28C010-20FM/883Roving Networks / Microchip Technology |
IC EEPROM 1MBIT PAR 32FLATPACK |
|
AT25DF512C-XMHN-TAdesto Technologies |
IC FLASH 512KBIT SPI 8TSSOP |
|
R1LV0216BSB-7SI#B0Rochester Electronics |
IC SRAM 2MBIT PARALLEL 44TSOP II |