English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | - |
| 内存格式: | - |
| 技术: | - |
| 内存大小: | - |
| 内存接口: | - |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
EM68C16CWQG-25HEtron Technology |
IC DRAM 1GBIT PARALLEL 84FBGA |
|
R1LV5256ESP-7SI#B0Rochester Electronics |
STANDARD SRAM, 32KX8, 70NS |
|
CY7C006A-20AXCFlip Electronics |
IC SRAM 128KBIT PARALLEL 64TQFP |
|
71V3578S150PFGIRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
CY7C1011G30-12ZSXECypress Semiconductor |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
M28W320FCT70N6EFlip Electronics |
IC FLASH 32MBIT PARALLEL 48TSOP |
|
IS62WV12816EBLL-45BLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 2MBIT PARALLEL 48MINIBGA |
|
BQ4010YMA-70NRochester Electronics |
IC NVSRAM 64KBIT PARALLEL 28DIP |
|
IS43DR86400D-25DBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TWBGA |
|
M45PE20-VMN6PAlliance Memory, Inc. |
IC FLASH 2MBIT SPI 75MHZ 8SO |
|
11AA020-I/TORoving Networks / Microchip Technology |
IC EEPROM 2KBIT SGL WIRE TO92-3 |
|
CY62147G30-45BVXACypress Semiconductor |
IC SRAM 4MBIT PARALLEL 48VFBGA |
|
CY7C25652KV18-500BZXCCypress Semiconductor |
IC SRAM 72MBIT PARALLEL 165FBGA |
