English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 4Kb (512 x 8, 256 x 16) |
| 内存接口: | SPI |
| 时钟频率: | 1 MHz |
| 写周期时间 - 字，页: | 10ms |
| 访问时间: | - |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Through Hole |
| 包/箱: | 8-DIP (0.300", 7.62mm) |
| 供应商设备包: | 8-DIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
M24C04-FDW6TPSTMicroelectronics |
IC EEPROM 4KBIT I2C 8TSSOP |
|
CY7C1418UV18-250BZXCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
N04L63W2AT27IRochester Electronics |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
CY7C1370KV33-200AXCCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
MT46H128M16LFDD-48 IT:C TRMicron Technology |
IC DRAM 2GBIT PARALLEL 60VFBGA |
|
IS46LR16320C-6BLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
25LC040AT-E/MSRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 10MHZ 8MSOP |
|
24LC64XT-I/STRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8TSSOP |
|
BR24G02FV-3GTE2ROHM Semiconductor |
IC EEPROM 2KBIT I2C 8SSOPB |
|
AT28HC256-90UM/883Roving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28CPGA |
|
CY27C512-45ZCRochester Electronics |
OTP ROM, 64KX8, 45NS PDSO28 |
|
SST39SF020A-70-4C-WHERoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32TSOP |
|
CY62128DV30LL-70ZXITRochester Electronics |
STANDARD SRAM, 128KX8 |
