English
简体中文
CAP FILM 0.47UF 10% 305VAC RAD
IC SRAM 1MBIT PARALLEL 48VFBGA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MoBL® |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 1Mb (64K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 45ns |
| 访问时间: | 45 ns |
| 电压 - 电源: | 2.2V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 48-VFBGA |
| 供应商设备包: | 48-VFBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY7C251-65DMBRochester Electronics |
OTP ROM, 16KX8, 65NS |
|
CAT24C02WI-GT3ARochester Electronics |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
SMJ4161-15JDSRochester Electronics |
VIDEO DRAM, 64KX1, 150NS, NMOS |
|
CAT93C66VE-GT3Rochester Electronics |
IC EEPROM 4KBIT SPI 2MHZ 8SOIC |
|
IS43LR16200D-6BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 32MBIT PARALLEL 60TFBGA |
|
S25FL128SDSBHI213Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
IS45S16320F-7TLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 54TSOP II |
|
M24C16-FMH6TGSTMicroelectronics |
IC EEPROM 16KBIT I2C 5UFDFPN |
|
CY7C1021BN-12ZXCRochester Electronics |
STANDARD SRAM, 64KX16, 12NS PDSO |
|
DS2431X-S+Maxim Integrated |
IC EEPROM 1KBIT 1-WIRE 6UCSPR |
|
GS82582Q38GE-500IGSI Technology |
IC SRAM 288MBIT PAR 165FPBGA |
|
IS42S16320D-6TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 54TSOP II |
|
71V2546S150PFG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |