类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 8Kb (1K x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 105°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.173", 4.40mm Width) |
供应商设备包: | 8-SOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C15632KV18-450BZCCypress Semiconductor |
NO WARRANTY |
|
7130LA100PDGRenesas Electronics America |
IC SRAM 8KBIT PARALLEL 48DIP |
|
AS4C16M16D2-25BINTRAlliance Memory, Inc. |
IC DRAM 256MBIT PARALLEL 84TFBGA |
|
IM6654MJG/883BRochester Electronics |
4096-BIT CMOS UV EPROM |
|
25LC160DT-H/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 5MHZ 8SOIC |
|
70V3399S166BC8Renesas Electronics America |
IC SRAM 2MBIT PARALLEL 256CABGA |
|
AM29LV116DT-90EIRochester Electronics |
IC FLASH 16MBIT PARALLEL 40TSOP |
|
MT54V512H18EF-6CRochester Electronics |
512KX18 2.5V VDD HSTL QDRB4 SRAM |
|
GS82582D20GE-550IGSI Technology |
IC SRAM 288MBIT PAR 165FPBGA |
|
CY7C1545KV18-450BZXIRochester Electronics |
QDR SRAM, 2MX36, 0.45NS PBGA165 |
|
MX25R4035FZUIH0Macronix |
IC FLASH 4MBIT SPI/QUAD 8USON |
|
71V2556S133PFGIRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
CY14B116N-BZ25XICypress Semiconductor |
NO WARRANTY |