类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100 |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 16Kb (2K x 8) |
内存接口: | SPI |
时钟频率: | 10 MHz |
写周期时间 - 字,页: | 4ms |
访问时间: | - |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOP-J |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
71T75802S200BG8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
SST39WF800B-70-4I-B3KE-TRoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 48TFBGA |
|
S70FL01GSDPMFV013Cypress Semiconductor |
IC FLASH 1GBIT SPI/QUAD 16SOIC |
|
24AA08-I/PRoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 400KHZ 8DIP |
|
IS42S16800F-6BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 54TFBGA |
|
IS45S16100H-7BLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PARALLEL 60TFBGA |
|
UPD44164182BF5-E40X-EQ3Rochester Electronics |
DDR SRAM, 1MX18, 0.45NS |
|
IS43DR81280C-3DBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 60TWBGA |
|
IS42VM32800K-75BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
SST25VF040B-50-4I-SAE-TRoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 50MHZ 8SOIC |
|
AS4C4M16D1A-5TINAlliance Memory, Inc. |
IC DRAM 64MBIT PAR 66TSOP II |
|
71V67603S166BQGRochester Electronics |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
IS45S32400F-6BLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |