类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Not For New Designs |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR2 |
内存大小: | 1Gb (128M x 8) |
内存接口: | Parallel |
时钟频率: | 333 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 450 ps |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 60-TFBGA |
供应商设备包: | 60-TWBGA (8x10.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S34ML02G100TFV000Flip Electronics |
IC FLASH 2GBIT PARALLEL 48TSOP I |
|
FT24C04A-USR-TFremont Micro Devices |
IC EEPROM 4KBIT I2C 1MHZ 8SOP |
|
FT24C02A-KTR-TFremont Micro Devices |
IC EEPROM 2KBIT I2C 1MHZ 8TSSOP |
|
BR24T02FVT-WE2ROHM Semiconductor |
IC EEPROM 2KBIT I2C 8TSSOPB |
|
GS82582TT19GE-450IGSI Technology |
IC SRAM 288MBIT PAR 165FPBGA |
|
71321LA25JGIRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
25AA160B-I/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 10MHZ 8SOIC |
|
IS64WV51216BLL-10MLA3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 48MINIBGA |
|
93LC76/PRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ 8DIP |
|
CAT93C66YI-GRochester Electronics |
IC EEPROM 4KBIT SPI 2MHZ 8TSSOP |
|
CY7C1515KV18-300BZIRochester Electronics |
QDR SRAM, 2MX36, 0.45NS PBGA165 |
|
AS7C513B-15JCNTRAlliance Memory, Inc. |
IC SRAM 512KBIT PARALLEL 44SOJ |
|
25AA160T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 1MHZ 8SOIC |