类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR3 |
内存大小: | 512Mb (64M x 8) |
内存接口: | Parallel |
时钟频率: | 800 MHz |
写周期时间 - 字,页: | - |
访问时间: | 20 ns |
电压 - 电源: | 1.283V ~ 1.45V |
工作温度: | -40°C ~ 95°C (TA) |
安装类型: | Surface Mount |
包/箱: | 78-VFBGA |
供应商设备包: | 78-FBGA (8x10.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
UPD44164184BF5-E40-EQ3Rochester Electronics |
DDR SRAM, 1MX18, 0.45NS |
|
CY7C1327G-133AXIRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
71V25761S183PFG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
CY7C1412AV18-167BZXIRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
24LC01BT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8SOIC |
|
S25FL256SAGBHIA10Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |
|
CY7C25422KV18-333BZXIRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
AS7C31026B-15TCNTRAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 44TSOP2 |
|
FM24C03ULZMT8XRochester Electronics |
IC EEPROM 2KBIT I2C 8TSSOP |
|
CY7C1460KV25-250AXCCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 100TQFP |
|
S70FL01GSDSBHMC13Cypress Semiconductor |
IC FLSH 1GBIT SPI/QUAD I/O 24BGA |
|
RMLV1616AGSA-5S2#AA0Renesas Electronics America |
IC SRAM 16MBIT PARALLEL 48TSOP I |
|
LE25U40CQE-AHSanyo Semiconductor/ON Semiconductor |
IC FLASH 4MBIT SPI 40MHZ 8VSON |