类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, QDR II |
内存大小: | 18Mb (512K x 36) |
内存接口: | Parallel |
时钟频率: | 250 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-LBGA |
供应商设备包: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT24C512C-SHM-TRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8SOIC |
|
MD2148HRochester Electronics |
STANDARD SRAM, 1KX4 |
|
CY7C25632KV18-400BZXICypress Semiconductor |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
IS43TR16128CL-125KBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
24LC04BT/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 400KHZ 8SOIC |
|
24FC04HT-E/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8SOIC |
|
W25Q80EWZPIGWinbond Electronics Corporation |
IC FLASH 8MBIT SPI 104MHZ 8WSON |
|
S29GL128S10DHB023Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
AS4C8M32MD2A-25BPCNAlliance Memory, Inc. |
IC DRAM 256MBIT PARALLEL 168FBGA |
|
R1LP5256ESP-5SI#S1Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOP |
|
CY7C195B-12VCRochester Electronics |
STANDARD SRAM, 64KX4, 12NS |
|
24AA044T-E/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8SOIC |
|
S-24C04DI-A8T1U5ABLIC U.S.A. Inc. |
IC EEPROM 4KBIT I2C HSNT-8-A |