CAP CER 0.22UF 50V X7R 1206
DDR SRAM, 2MX36, 0.45NS PBGA165
DGTL ISO 5000VRMS 4CH GP 16SOIC
类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, DDR II+ |
内存大小: | 72Mb (2M x 36) |
内存接口: | Parallel |
时钟频率: | 500 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-LBGA |
供应商设备包: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
5962-8858702VARochester Electronics |
STANDARD SRAM, 4KX1, 35NS, CMOS |
|
S27KL0642DPBHI020Cypress Semiconductor |
IC PSRAM 64MBIT HYPERBUS 24FBGA |
|
W29N04GZBIBAWinbond Electronics Corporation |
IC FLASH 4GBIT PARALLEL 63VFBGA |
|
STK11C88-SF45TRRochester Electronics |
IC NVSRAM 256KBIT PAR 28SOIC |
|
25LC160-I/PRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 2MHZ 8DIP |
|
71V256SA12YIRochester Electronics |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
BR24C08-RDS6TPROHM Semiconductor |
IC EEPROM 8KBIT I2C 8TSSOP |
|
93LC66BT-I/MSRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8MSOP |
|
MT48LC16M16A2B4-6A AIT:G TRMicron Technology |
IC DRAM 256MBIT PARALLEL 54VFBGA |
|
CY7C0852V-133BBCRochester Electronics |
DUAL-PORT SRAM, 128KX36, 4.4NS, |
|
S25FL128SDPBHV210Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
S25FL128SDSMFBG00Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
93LC46-I/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |