类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, QDR II+ |
内存大小: | 72Mb (2M x 36) |
内存接口: | Parallel |
时钟频率: | 400 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-LBGA |
供应商设备包: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS43DR82560C-3DBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 60TWBGA |
|
S29GL01GP12TFI023Rochester Electronics |
IC FLASH 1GBIT PARALLEL 56TSOP |
|
CAT25512HU5E-GT3Rochester Electronics |
EEPROM, 64KX8, SERIAL, CMOS, PDS |
|
IS42RM32160E-75BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90TFBGA |
|
25LC128T-E/STRoving Networks / Microchip Technology |
IC EEPROM 128KBIT SPI 8TSSOP |
|
W25Q80EWSNIGWinbond Electronics Corporation |
IC FLASH 8MBIT SPI 104MHZ 8SOIC |
|
M93C86-RDW3TP/KSTMicroelectronics |
IC EEPROM 16KBIT SPI 2MHZ 8TSSOP |
|
IS61WV102416EDBLL-10B2LIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 16MBIT PARALLEL 48TFBGA |
|
CY7C1019CV33-15VCRochester Electronics |
STANDARD SRAM, 128KX8 |
|
MT29F4G08ABAFAWP-AAT:F TRMicron Technology |
IC FLASH 4GBIT PARALLEL 48TSOP I |
|
S25HS512TDPBHI010Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 24BGA |
|
70V3319S166BFRenesas Electronics America |
IC SRAM 4.5MBIT PAR 208CABGA |
|
CY62146GN-45ZSXICypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44TSOP II |