类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
内存类型: | - |
内存格式: | - |
技术: | - |
内存大小: | - |
内存接口: | - |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | - |
工作温度: | - |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
R1LP0408DSB-5SI#B1Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 32TSOP II |
|
GD25LQ16CSIGGigaDevice |
IC FLASH 16MBIT SPI/QUAD 8SOP |
|
71V547S100PFGIRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
71V67603S150PFGIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
MT53E768M32D4DT-053 AAT:E TRMicron Technology |
IC DRAM 24GBIT 1.866GHZ 200VFBGA |
|
UPD46185182BF1-E40-EQ1-ARochester Electronics |
QDR SRAM, 1MX18, 0.45NS |
|
CAT24C05LI-GRochester Electronics |
IC EEPROM 4KBIT I2C 400KHZ 8DIP |
|
25LC512T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 512KBIT SPI 8SOIC |
|
S25FL128SAGBHVB00Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
71016S12PHGIRochester Electronics |
SRAM 1 MEG (64K X 16-BIT) |
|
IS65WV102416DBLL-55CTLA3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 16MBIT PARALLEL 48TSOP I |
|
MT28EW256ABA1LPC-0SITMicron Technology |
IC FLASH 256MBIT PARALLEL 64LBGA |
|
47C16-E/SNRoving Networks / Microchip Technology |
IC EERAM 16KBIT I2C 1MHZ 8SOIC |