类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 4.5Mb (128K x 36) |
内存接口: | Parallel |
时钟频率: | 117 MHz |
写周期时间 - 字,页: | - |
访问时间: | 7.5 ns |
电压 - 电源: | 3.15V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 119-BGA |
供应商设备包: | 119-PBGA (14x22) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1314KV18-250BZCTCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
S25FL128SAGMFIR13Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
71V416S10PHGI8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
W25X10CLUXIG TRWinbond Electronics Corporation |
IC FLASH 1MBIT SPI 104MHZ 8USON |
|
S29GL01GS11FAIV10Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
S29GL512T11FAIV23Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
MX25L1673EZNI-10GMacronix |
IC FLASH 16MBIT SPI 104MHZ 8WSON |
|
DS1220Y-120+Rochester Electronics |
IC NVSRAM 16KBIT PARALLEL 24DIP |
|
IS64WV12816DBLL-12BLA3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 2MBIT PARALLEL 48MINIBGA |
|
IS62WV5128EALL-55TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 32TSOP I |
|
25AA080CT-I/MNYRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8TDFN |
|
S26KS128SDABHN030Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 24FBGA |
|
71V67703S85BGGIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |