类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, QDR II+ |
内存大小: | 18Mb (512K x 36) |
内存接口: | Parallel |
时钟频率: | 550 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-LBGA |
供应商设备包: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BR25L040F-WE2ROHM Semiconductor |
IC EEPROM 4KBIT SPI 5MHZ 8SOP |
|
BR93H76RF-2CE2ROHM Semiconductor |
IC EEPROM 8KBIT SPI 2MHZ 8SOP |
|
QS70261A-35TFRochester Electronics |
IC SRAM 256KBIT 28MHZ |
|
CY7C1387BV25-150BGCRochester Electronics |
CACHE SRAM, 1MX18, 3.8NS |
|
24LC1026T-I/SMRoving Networks / Microchip Technology |
IC EEPROM 1MBIT I2C 400KHZ 8SOIJ |
|
AS4C16M16D1-5BINTRAlliance Memory, Inc. |
IC DRAM 256MBIT PARALLEL 60TFBGA |
|
AS7C1025B-12JCNTRAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
S29GL512T12DHN010YRochester Electronics |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
W948D2FBJX5I TRWinbond Electronics Corporation |
IC DRAM 256MBIT PARALLEL 90VFBGA |
|
70T651S15BF8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 208CABGA |
|
70V9199L7PFG8Renesas Electronics America |
IC SRAM 1.125MBIT PAR 100TQFP |
|
24LC128T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 8SOIC |
|
MR256A08BMA35Everspin Technologies, Inc. |
IC RAM 256KBIT PARALLEL 48FBGA |