类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 2Kb (256 x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 1ms |
访问时间: | 900 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Through Hole |
包/箱: | 8-DIP (0.300", 7.62mm) |
供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1021B-15VCRochester Electronics |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
CAT25C08VRochester Electronics |
IC EEPROM 8KBIT SPI 10MHZ 8SOIC |
|
25AA256-I/SMRoving Networks / Microchip Technology |
IC EEPROM 256KBIT SPI 8SOIJ |
|
FM24CL16B-DGCypress Semiconductor |
IC FRAM 16KBIT I2C 1MHZ 8TDFN |
|
S25FL128SAGBHIA00Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
CAT24C05YI-GT3Rochester Electronics |
IC EEPROM 4KBIT I2C 8TSSOP |
|
FM24C64LENRochester Electronics |
IC EEPROM 64KBIT I2C 100KHZ 8DIP |
|
AS7C1024B-12JINAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
R1LV1616RSD-5SI#B0Rochester Electronics |
IC SRAM 16MBIT PAR 52TSOP II |
|
CAT24C16LIRochester Electronics |
IC EEPROM 16KBIT I2C 400KHZ 8DIP |
|
IS42SM32160E-75BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90TFBGA |
|
24C01CT-I/MSRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8MSOP |
|
IS45S16160J-7BLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |