类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 1Mb (64K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 20ns |
访问时间: | 20 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 44-BSOJ (0.400", 10.16mm Width) |
供应商设备包: | 44-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S25FL128LAGNFA013Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
W25R128JVSIQWinbond Electronics Corporation |
IC FLASH 128MBIT SPI/QUAD 8SOIC |
|
MT48LC4M16A2P-6A:J TRMicron Technology |
IC DRAM 64MBIT PAR 54TSOP II |
|
BR24T01FJ-WE2ROHM Semiconductor |
IC EEPROM 1KBIT I2C 400KHZ 8SOPJ |
|
MB85RS128BPNF-G-JNERE1Fujitsu Electronics America, Inc. |
IC FRAM 128KBIT SPI 33MHZ 8SOP |
|
MT58L64L36FT-8Rochester Electronics |
CACHE SRAM, 64KX36 |
|
CY7C1021BV33L-15VCRochester Electronics |
STANDARD SRAM, 64KX16, 15NS |
|
IS42S16320D-6TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 54TSOP II |
|
AS7C32098A-20TINAlliance Memory, Inc. |
IC SRAM 2MBIT PARALLEL 44TSOP2 |
|
CY7C09369V-9ACRochester Electronics |
DUAL-PORT SRAM, 16KX18, 9NS |
|
SNJ54LS170JRochester Electronics |
STANDARD SRAM, 4X4, 45NS, TTL |
|
BR24S08FVT-WE2ROHM Semiconductor |
IC EEPROM 8KBIT I2C 8TSSOPB |
|
AT93C66A-10TQ-2.7Rochester Electronics |
EEPROM, 256X16, SERIAL, CMOS |