English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - Mobile |
| 内存大小: | 64Mb (4M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 166 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 5.5 ns |
| 电压 - 电源: | 1.7V ~ 1.95V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 54-TFBGA |
| 供应商设备包: | 54-TFBGA (8x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S25FS128SDSBHB200Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
FM24C09UFNRochester Electronics |
IC EEPROM 8KBIT I2C 400KHZ 8DIP |
|
CY7C166-15VCRochester Electronics |
STANDARD SRAM, 16KX4, 15NS, CMOS |
|
AT24CS32-STUM-TRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C SOT23-5 |
|
IS42S83200G-7TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
25LC1024-I/PRoving Networks / Microchip Technology |
IC EEPROM 1MBIT SPI 20MHZ 8DIP |
|
CY62256VNLL-70ZXARochester Electronics |
IC SRAM 256KBIT PAR 28TSOP I |
|
IS64LF12832EC-7.5TQLA3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 100LQFP |
|
CY62256LL-70ZRIRochester Electronics |
STANDARD SRAM, 32KX8, 70NS |
|
CY7C2665KV18-550BZXICypress Semiconductor |
IC SRAM 144MBIT PARALLEL 165FBGA |
|
MT48LC16M16A2B4-6A XIT:G TRMicron Technology |
IC DRAM 256MBIT PARALLEL 54VFBGA |
|
AT45DB021E-MHN2B-TAdesto Technologies |
IC FLASH 2MBIT SPI 70MHZ 8UDFN |
|
S29GL512S11TFV013Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 56TSOP |
