类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 2Kb (256 x 8) |
内存接口: | SPI |
时钟频率: | 2 MHz |
写周期时间 - 字,页: | 6ms |
访问时间: | - |
电压 - 电源: | 1.8V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BR25S128FJ-WE2ROHM Semiconductor |
IC EEPROM 128KBIT SPI 8SOPJ |
|
SST49LF080A-33-4C-NHE-TRoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 32PLCC |
|
IS45S32200L-6TLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 86TSOP II |
|
CY7C1414KV18-300BZIRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
CY7C1061G30-10ZXITCypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48TSOP I |
|
BR24L16F-WE2ROHM Semiconductor |
IC EEPROM 16KBIT I2C 400KHZ 8SOP |
|
CY14V101QS-SF108XQFlip Electronics |
IC NVSRAM 1MBIT SPI 16SOIC |
|
IS62WV102416EBLL-55BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 16MBIT PARALLEL 48VFBGA |
|
CY14B116M-BZ45XIRochester Electronics |
NON-VOLATILE SRAM, 1MX16, 45NS P |
|
NM25C160M8XRochester Electronics |
EEPROM, 2KX8, SERIAL, CMOS |
|
S29CD016J0PFAM010Rochester Electronics |
IC FLASH 16MBIT PARALLEL 80FBGA |
|
23LCV512T-I/STRoving Networks / Microchip Technology |
IC SRAM 512KBIT SPI/DL 8TSSOP |
|
71V424L10YIRochester Electronics |
IC SRAM 4MBIT PARALLEL 36SOJ |