类型 | 描述 |
---|---|
系列: | SST26 SQI® |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH |
内存大小: | 64Mb (8M x 8) |
内存接口: | SPI - Quad I/O |
时钟频率: | 104 MHz |
写周期时间 - 字,页: | 1.5ms |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.209", 5.30mm Width) |
供应商设备包: | 8-SOIJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1315KV18-300BZXCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
AS8C403625-QC75NAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 100TQFP |
|
CY7C1548KV18-400BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
71V65703S75BGG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
M93C86-RMN3TP/KSTMicroelectronics |
IC EEPROM 16KBIT SPI 2MHZ 8SO |
|
GD25LQ20COIGRGigaDevice |
IC FLASH 2MBIT SPI/QUAD 8TSSOP |
|
BR93L66FVT-WE2ROHM Semiconductor |
IC EEPROM 4KBIT SPI 2MHZ 8TSSOPB |
|
R1EX24128ASAS0I#S0Rochester Electronics |
EEPROM, 16KX8, SERIAL |
|
CY7C1061G30-10ZSXICypress Semiconductor |
IC SRAM 16MBIT PAR 54TSOP II |
|
71V124SA12PHGIRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 32TSOP II |
|
24AA02UID-I/PRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8DIP |
|
71V65703S85BQG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
71V67903S75BQRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |