English
简体中文
CRYSTAL 48.0000MHZ 12PF SMD
MOSFET N-CHANNEL 500V 4A TO252
DIODE GEN PURP 100V 200MA SOD323
IC DRAM 512MBIT PARALLEL 90TFBGA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Not For New Designs |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM |
| 内存大小: | 512Mb (16M x 32) |
| 内存接口: | Parallel |
| 时钟频率: | 166 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 5.4 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 90-TFBGA |
| 供应商设备包: | 90-TFBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S25FL129P0XBHI300Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
AT24C32E-SSHM-BRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 1MHZ 8SOIC |
|
GS8322Z36AGB-250IVGSI Technology |
IC SRAM 36MBIT PARALLEL 119FPBGA |
|
71V016SA12PHG8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
70T3589S166BCRenesas Electronics America |
IC SRAM 2MBIT PARALLEL 256CABGA |
|
BR24C01-WDS6TPROHM Semiconductor |
IC EEPROM 1KBIT I2C 8TSSOP |
|
71V65703S80PFRochester Electronics |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
RM24C256C-LSNI-TAdesto Technologies |
IC CBRAM 256KBIT I2C 1MHZ 8SOIC |
|
MX25L6433FZNI-08GMacronix |
IC FLASH 64MBIT SPI/QUAD 8WSON |
|
IS43DR86400C-3DBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TWBGA |
|
CY62157EV30LL-45BVICypress Semiconductor |
IC SRAM 8MBIT PARALLEL 48VFBGA |
|
DS28E05P+TMaxim Integrated |
IC EEPROM 896B 1-WIRE 6TSOC |
|
MR2A16ACMA35Everspin Technologies, Inc. |
IC RAM 4MBIT PARALLEL 48FBGA |