类型 | 描述 |
---|---|
系列: | FL-S |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 128Mb (16M x 8) |
内存接口: | SPI - Quad I/O |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 105°C (TA) |
安装类型: | Surface Mount |
包/箱: | 16-SOIC (0.295", 7.50mm Width) |
供应商设备包: | 16-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS61C64AL-10TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 64KBIT PARALLEL 28TSOP I |
|
CY7C0853AV-133BBCRochester Electronics |
IC SRAM 9MBIT PARALLEL 172FBGA |
|
93LC76BT-E/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ 8SOIC |
|
NV24C04DWVLT3GSanyo Semiconductor/ON Semiconductor |
IC EEPROM 4KBIT I2C 1MHZ 8SOIC |
|
24LC014T-E/MSRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8MSOP |
|
N24C02UDTGSanyo Semiconductor/ON Semiconductor |
IC EEPROM 2KBIT I2C 1MHZ US8 |
|
GD25WD10CTIGRGigaDevice |
IC FLASH 1MBIT SPI/QUAD I/O 8SOP |
|
93LC66CT-I/MSRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 3MHZ 8MSOP |
|
W9751G6NB-18Winbond Electronics Corporation |
IC DRAM 512MBIT PARALLEL 84VFBGA |
|
BR25G320F-3GE2ROHM Semiconductor |
IC EEPROM 32KBIT SPI 20MHZ 8SOP |
|
MX25L8006EZUI-12GMacronix |
IC FLASH 8MBIT SPI 86MHZ 8USON |
|
70V3389S4BCGRenesas Electronics America |
IC SRAM 1.125MBIT PAR 256CABGA |
|
IS65WV1288BLL-55HLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 32STSOP I |