类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR3L |
内存大小: | 4Gb (256M x 16) |
内存接口: | Parallel |
时钟频率: | 933 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 20 ns |
电压 - 电源: | 1.283V ~ 1.45V |
工作温度: | 0°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 96-TFBGA |
供应商设备包: | 96-TWBGA (9x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
23LC1024-I/STRoving Networks / Microchip Technology |
IC SRAM 1MBIT SPI/QUAD 8TSSOP |
|
MR3A16AMA35Everspin Technologies, Inc. |
IC RAM 8MBIT PARALLEL 48FBGA |
|
71256SA12YIRochester Electronics |
SRAM 256K (32K X 8-BIT) |
|
DS1270W-100INDRochester Electronics |
IC NVSRAM 16MBIT PARALLEL 36EDIP |
|
CY7C2270KV18-400BZXCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
UPD46364185BF1-E33-EQ1-ARochester Electronics |
DDR SRAM, 2MX18, 0.45NS |
|
25LC080CT-E/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8SOIC |
|
BR24G256FVT-3GE2ROHM Semiconductor |
IC EEPROM 256KBIT I2C 8TSSOPB |
|
JS28F128J3F75BAlliance Memory, Inc. |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
UPD46365362BF1-E33-EQ1-ARochester Electronics |
QDR SRAM, 1MX36, 0.45NS |
|
CY7C09169AV-12AXCRochester Electronics |
IC SRAM 144K PARALLEL 100TQFP |
|
CY7C1019CV33-15ZXIRochester Electronics |
IC SRAM 1MBIT PARALLEL 32TSOP II |
|
CY62128ELL-55ZAXECypress Semiconductor |
NO WARRANTY |