English
简体中文
CAP TANT 47UF 10% 6.3V 2312
CBL RIBN 26COND 0.050 GRAY 100'
IC DRAM 1GBIT PARALLEL 60TWBGA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - Mobile LPDDR |
| 内存大小: | 1Gb (64M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 200 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 5 ns |
| 电压 - 电源: | 1.7V ~ 1.95V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 60-TFBGA |
| 供应商设备包: | 60-TWBGA (8x10) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S25FL256LDPMFV000Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
IS64WV102416BLL-10CTLA3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 16MBIT PARALLEL 48TSOP I |
|
93C46A-E/MSRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8MSOP |
|
MK20DN512ZVMC10557Rochester Electronics |
KINETIS K20: 100MHZ CORTEX M4 PE |
|
MT29F1G01ABAFDSF-AAT:FMicron Technology |
IC FLASH 1GBIT SPI 16SO |
|
AF128GEC5X-2001IXATP Electronics, Inc. |
IC 128GBIT 153BGA |
|
S29GL064N90FFI010Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
CY7C1387D-167AXCRochester Electronics |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
CY7C1024AV33-10BGCRochester Electronics |
STANDARD SRAM, 128KX24 |
|
24LCS52T/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
R1LP0108ESF-5SR#B0Rochester Electronics |
IC SRAM 1MBIT PARALLEL 32TSOP |
|
24AA044-E/STRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8TSSOP |
|
S25FL512SAGBHIY13Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 24BGA |