类型 | 描述 |
---|---|
系列: | HyperFlash™ KL |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 256Mb (32M x 8) |
内存接口: | Parallel |
时钟频率: | 100 MHz |
写周期时间 - 字,页: | - |
访问时间: | 96 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 24-VBGA |
供应商设备包: | 24-FBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
71T75802S200PFGI8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
CY7C131-25JXCRochester Electronics |
IC SRAM 8KBIT PARALLEL 52PLCC |
|
34AA04T-I/MNYRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8TDFN |
|
BR93G46FJ-3AGTE2ROHM Semiconductor |
IC EEPROM 1KBIT SPI 3MHZ 8SOPJ |
|
BR93H66RFJ-2CE2ROHM Semiconductor |
IC EEPROM 4KBIT SPI 2MHZ 8SOPJ |
|
GD25VQ40CTIGRGigaDevice |
IC FLASH 4MBIT SPI/QUAD I/O 8SOP |
|
BR24T01F-WE2ROHM Semiconductor |
IC EEPROM 1KBIT I2C 400KHZ 8SOP |
|
CY7C25702KV18-400BZCRochester Electronics |
DDR SRAM, 2MX36, 0.45NS, CMOS, P |
|
S25FL064LABNFB013Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 8WSON |
|
S25FS064SAGBHI020Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 24FBGA |
|
CY7C1019BV33-10VCRochester Electronics |
STANDARD SRAM, 128KX8 |
|
SST39VF1602-70-4I-B3KERoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48TFBGA |
|
W947D6HBHX5I TRWinbond Electronics Corporation |
IC DRAM 128MBIT PARALLEL 60VFBGA |