类型 | 描述 |
---|---|
系列: | MS-2 |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NAND |
内存大小: | 2Gb (128M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 45ns |
访问时间: | 45 ns |
电压 - 电源: | 1.7V ~ 1.95V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 63-VFBGA |
供应商设备包: | 63-BGA (11x9) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS43DR86400C-25DBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TWBGA |
|
IS43DR86400C-3DBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TWBGA |
|
W25Q64JVSFIQWinbond Electronics Corporation |
IC FLASH 64MBIT SPI/QUAD 16SOIC |
|
AS7C34098A-20TCNTRAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 44TSOP2 |
|
MX25L12835FZNI-10GMacronix |
IC FLSH 128MBIT SPI 104MHZ 8WSON |
|
IS42S32160D-7BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90TFBGA |
|
AT21CS01-SSHM10-BRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 125KHZ 8SOIC |
|
S29GL064N90DAI020Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
JBP28L22MJRochester Electronics |
OTP ROM, 256X8, 75NS, BIPOLAR |
|
MX25U8033EZUI-12GMacronix |
IC FLSH 8MBIT SPI/QUAD I/O 8USON |
|
24LC512-E/STRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8TSSOP |
|
71V67803S166PFG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
AS4C256M16D3LC-12BANTRAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 96FBGA |