English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 1Kb (128 x 8) |
| 内存接口: | I²C |
| 时钟频率: | 400 kHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | 900 ns |
| 电压 - 电源: | 1.7V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
| 供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MB85RS16NPN-G-AMEWE1Fujitsu Electronics America, Inc. |
IC FRAM 16KBIT SPI 20MHZ 8SON |
|
FM24C09ULEM8Rochester Electronics |
IC EEPROM 8KBIT I2C 100KHZ 8SOIC |
|
SST26VF016BT-104I/SNRoving Networks / Microchip Technology |
IC FLASH 16MBIT SPI/QUAD 8SOIC |
|
S29GL128P11FAIV20Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
AT45DB021E-MHN-TAdesto Technologies |
IC FLASH 2MBIT SPI 70MHZ 8UDFN |
|
CY14V104LA-BA25XITCypress Semiconductor |
IC NVSRAM 4MBIT PARALLEL 48FBGA |
|
CY7C138-25JXIRochester Electronics |
IC SRAM 32KBIT PARALLEL 68PLCC |
|
MT25QL512ABB8E12-0AUT TRMicron Technology |
IC FLASH 512MBIT SPI 24TPBGA |
|
MT58L512Y36PT-6Rochester Electronics |
CACHE SRAM, 512KX36, 3.5NS PQFP1 |
|
IS43DR81280B-25DBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 60TWBGA |
|
CAT24C03YI-GT3Rochester Electronics |
IC EEPROM 2KBIT I2C 8TSSOP |
|
S29GL512T10GHI020Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 56FBGA |
|
DS1250YP-70IND+Maxim Integrated |
IC NVSRAM 4MBIT PAR 34PWRCAP |
