类型 | 描述 |
---|---|
系列: | GL-T |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 1Gb (128M x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 60ns |
访问时间: | 130 ns |
电压 - 电源: | 1.65V ~ 3.6V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 56-TFSOP (0.724", 18.40mm Width) |
供应商设备包: | 56-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
HM5-8808-8Rochester Electronics |
8K X 8 MULTI DEVICE SRAM MODULE |
|
RD38F1020C0ZTL0SB93 |
IC FLASH RAM 32MBIT PAR 66SCSP |
|
HM1-6551B-9Rochester Electronics |
256 X 4 CMOS RAM |
|
BR93L86RFVM-WTRROHM Semiconductor |
IC EEPROM 16KBIT SPI 2MHZ 8MSOP |
|
DS2502-E48Rochester Electronics |
IEEE EUI-64 NODE ADDRESS CHIP |
|
BR24G08NUX-3ATTRROHM Semiconductor |
IC EEPROM 8KBIT I2C VSON008X2030 |
|
S-24C02DI-J8T1U5ABLIC U.S.A. Inc. |
IC EEPROM 2KBIT I2C 1MHZ 8SOP |
|
CY7C4121KV13-667FCXCRochester Electronics |
QDR SRAM, 8MX18 PBGA361 |
|
93AA66T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8SOIC |
|
N25S818HAT21ITSanyo Semiconductor/ON Semiconductor |
IC SRAM 256KBIT SPI 16MHZ 8TSSOP |
|
S25FL512SDPMFIG11Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 16SOIC |
|
W632GG8NB15IWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 78VFBGA |
|
11AA160-I/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SGL WIRE 8SOIC |