类型 | 描述 |
---|---|
系列: | HyperRAM™ KS |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | PSRAM |
技术: | PSRAM (Pseudo SRAM) |
内存大小: | 128Mb (16M x 8) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | - |
访问时间: | 36 ns |
电压 - 电源: | 1.7V ~ 1.95V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 24-VBGA |
供应商设备包: | 24-FBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
M24C16-FDW6TPSTMicroelectronics |
IC EEPROM 16KBIT I2C 8TSSOP |
|
FM24C04ULVM8Rochester Electronics |
IC EEPROM 4KBIT I2C 100KHZ 8SO |
|
S34ML01G200BHI500SkyHigh Memory Limited |
IC FLASH 1G PARALLEL 63BGA |
|
MX29LV400CBTI-55QMacronix |
IC FLASH 4MBIT PARALLEL 48TSOP |
|
71V547XS100PFGRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
LE25S161XATAGRochester Electronics |
16 MB SERIAL FLASH MEMORY |
|
W631GU8MB11IWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 78VFBGA |
|
IS46R16320E-5TLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 66TSOP II |
|
CY7C1399BN-15ZXIRochester Electronics |
IC SRAM 256KBIT PAR 28TSOP I |
|
MX25L8035EM2I-10GMacronix |
IC FLASH 8MBIT SPI 108MHZ 8SOP |
|
11LC040-E/MSRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SGL WIRE 8MSOP |
|
CY62147EV30LL-45ZSXICypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
S25FL064LABNFV013Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 8WSON |