English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q100, F-RAM™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FRAM |
| 技术: | FRAM (Ferroelectric RAM) |
| 内存大小: | 2Mb (128K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 90ns |
| 访问时间: | 90 ns |
| 电压 - 电源: | 2V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 44-TSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BR25L160FJ-WE2ROHM Semiconductor |
IC EEPROM 16KBIT SPI 5MHZ 8SOPJ |
|
70V631S15BCRenesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
CY7C1061GE30-10BVJXITCypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48VFBGA |
|
24AA512T-I/MFRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8DFN |
|
71V124SA15TYG8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
AS4C2M32SA-7TCNAlliance Memory, Inc. |
IC DRAM 64MBIT PAR 86TSOP II |
|
CY62147EV30LL-45BVXICypress Semiconductor |
IC SRAM 4MBIT PARALLEL 48VFBGA |
|
IS43DR82560C-3DBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 60TWBGA |
|
7024L15PFGRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 100TQFP |
|
R1LV0816ASD-5SI#B0Rochester Electronics |
IC SRAM 8MBIT PARALLEL 52TSOP II |
|
71V3556SA133BGG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
R1LV0408DSP-5SR#B0Rochester Electronics |
IC SRAM 4MBIT PARALLEL 32SOP |
|
93LC76CT-I/STRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ 8TSSOP |
