类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR (ZBT) |
内存大小: | 18Mb (1M x 18) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | 8.5 ns |
电压 - 电源: | 2.375V ~ 2.625V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 119-BGA |
供应商设备包: | 119-PBGA (14x22) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
71V65703S85BQ8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
24LC01BT-I/LTRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C SC70-5 |
|
R1EX24032ASA00I#S0Rochester Electronics |
EEPROM, 4KX8, SERIAL |
|
CY7C1265KV18-450BZXCCypress Semiconductor |
NO WARRANTY |
|
AS4C4M16SA-7B2CNTRAlliance Memory, Inc. |
IC DRAM 64MBIT PAR 60FBGA |
|
IS43R16800E-5TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 66TSOP II |
|
25AA040AT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 10MHZ 8SOIC |
|
27C256-20/P230Rochester Electronics |
IC EPROM 256KBIT PARALLEL 28DIP |
|
MT58L128L32P1F-10Rochester Electronics |
CACHE SRAM, 128KX32, 5NS PBGA165 |
|
25AA160D-E/PRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 10MHZ 8DIP |
|
70V639S15BFRenesas Electronics America |
IC SRAM 2.25MBIT PAR 208CABGA |
|
BQ4011YMA-70Rochester Electronics |
IC NVSRAM 256KBIT PARALLEL 28DIP |
|
AS4C128M16D2A-25BINAlliance Memory, Inc. |
IC DRAM 2GBIT PARALLEL 84FBGA |